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BS EN IEC 61643-341:2020 Components for low-voltage surge protection - Performance requirements and test circuits for thyristor surge suppressors (TSS), 2020
- undefined
- Annex ZA(normative)Normative references to international publicationswith their corresponding European publications
- English [Go to Page]
- CONTENTS
- FOREWORD
- 1 Scope
- 2 Normative references
- 3 Terms, definitions, abbreviated terms and symbols [Go to Page]
- 3.1 Parametric terms, letter symbols and definitions
- 3.2 General terms
- 3.3 Main terminal ratings
- 3.4 Main terminal characteristics
- 3.5 Additional and derived parameters
- 3.6 Temperature related parameters
- 3.7 Gate terminal parameters
- 3.8 Abbreviated terms
- 3.9 Circuit symbols
- Figures [Go to Page]
- Figure 1 – Fixed voltage, two terminals: a) reverse blocking and b) reverse conducting
- 4 TSS types [Go to Page]
- Figure 2 – Gated reverse blocking: a) P gate b) N gate and c) P & N gate
- Figure 3 – Gated reverse conducting: a) P gate and b) N gate
- Figure 4 – Bidirectional: a) 2 terminal fixed voltage and b) gated
- Figure 5 – Switching quadrant characteristics: a) fixed-voltage TSS and b) gated TSS
- Figure 6 – TSS non-switching characteristics: a) reverse blocking b) reverse conducting
- Tables [Go to Page]
- Table 1 – Types of TSS
- 5 Service conditions [Go to Page]
- 5.1 Normal service conditions
- 5.2 Storage temperature range, Tstgmin.to Tstgmax.
- 6 Mechanical requirements and identification [Go to Page]
- 6.1 Robustness of terminations
- 6.2 Solderability
- 6.3 Marking
- 6.4 Documentation
- 7 Standard test methods [Go to Page]
- 7.1 Failure rates
- 7.2 Test conditions [Go to Page]
- 7.2.1 General
- 7.2.2 Standard atmospheric conditions
- 7.2.3 Measurement errors
- 7.2.4 Measurement accuracy
- 7.2.5 Designated impulse shape and values
- 7.2.6 Multiple TSS
- 7.2.7 Gated TSS testing
- 7.3 Rating test procedures [Go to Page]
- 7.3.1 General
- 7.3.2 Repetitive peak off-state voltage, VDRM
- 7.3.3 Repetitive peak on-state current, ITRM
- Figure 7 – Test circuit for verifying repetitive peak off-state voltage (VDRM)
- Figure 8 – Test circuit for verifying repetitive peak on-state current, ITRM [Go to Page]
- 7.3.4 Non-repetitive peak on-state current, ITSM
- Figure 9 – Repetitive peak on-state current waveforms [Go to Page]
- 7.3.5 Non-repetitive peak pulse current, IPP
- Figure 10 – Test circuit for verifying non-repetitive peak on-state current, ITSM [Go to Page]
- 7.3.6 Repetitive peak reverse voltage, VRRM
- 7.3.7 Non-repetitive surge forward current, IFSM
- 7.3.8 Repetitive peak forward current, IFRM
- Figure 11 – Test circuit for verifying non-repetitive peak pulse current, IPP [Go to Page]
- 7.3.9 Critical rate of rise of on-state current, di/dt
- Figure 12 – Test circuit for verifying critical rate of rise of on-state current (di/dt)
- 7.4 Characteristic test procedures [Go to Page]
- 7.4.1 General
- 7.4.2 Off-state current, ID
- Figure 13 – Half sine-wave di/dt test circuit [Go to Page]
- 7.4.3 Repetitive peak off-state current, IDRM
- 7.4.4 Repetitive peak reverse current, IRRM
- 7.4.5 Breakover voltage, V(BO) and current, I(BO)
- Figure 14 – Test circuit for off-state current, ID at VD
- Figure 15 – Test circuit for breakover, V(BO) and I(BO) and on-state voltage, VT
- Figure 16 – Voltage and current waveforms versus time for a fixed-voltage TSS showing switch-on, on-state and switch-off events [Go to Page]
- 7.4.6 On-state voltage, VT
- Table 2 – Breakover ramp rate test values
- Figure 17 – Waveform expansions of Figure 16
- Figure 18 – Voltage and current waveforms versus time for a gated TSS showing switch-on, on-state and switch-off events
- Figure 19 – Waveform expansions of Figure 18 [Go to Page]
- 7.4.7 Holding current, IH
- Figure 20 – Test circuit for holding current, IH [Go to Page]
- 7.4.8 Off-state capacitance, Co
- Figure 21 – Test circuit for holding current with additional DC bias
- Figure 22 – Test circuit for capacitance measurement
- Figure 23 – Test circuit for capacitance measurement with external DC bias
- Figure 24 – Test circuit for capacitance measurement of multi-terminal TSS [Go to Page]
- 7.4.9 Forward voltage, VF
- 7.4.10 Peak forward recovery voltage, VFRM
- Figure 25 – Diode voltage and current waveforms versus time showing VFRM and rising current di/dt [Go to Page]
- 7.4.11 Critical rate of off-state voltage rise, dv/dt
- 7.4.12 Variation of holding current with temperature
- 7.4.13 Gate-to-adjacent terminal peak off-state voltage and peak off-state gate current, VGDM, IGDM
- Figure 26 – Test circuit for exponential critical rate of off-state voltage rise, dv/dt [Go to Page]
- 7.4.14 Gate reverse current, adjacent terminal open, IGAO, IGKO
- Figure 27 – Test circuit for gate-to-adjacent terminal peak off-statevoltage and current, VGDM and IGDM
- Figure 28 – Test circuit for gate reverse current, adjacent terminal open, IGAO, IGKO [Go to Page]
- 7.4.15 Gate reverse current, main terminals short-circuited, IGAS, IGKS
- Figure 29 – Test circuit for gate reverse current,main terminals short-circuited, IGAS, IGKS
- Annex A (informative) Common impulse waveshapes [Go to Page]
- A.1 General
- A.2 Types of impulse generator
- A.3 Impulse generator parameters [Go to Page]
- A.3.1 Glossary of terms
- A.3.2 Virtual parameters
- Figure A.1 – Current or voltage impulse amplitude versus time showing a 10 % to 90 % T1 front time and T2 time to half value
- Figure A.2 – Voltage impulse amplitude versus time showing a 30 % to 90 % T1 front time and T2 time to half value
- A.4 Impulse generators typically used for surge protector testing [Go to Page]
- A.4.1 General
- A.4.2 Impulse generators with a defined voltage waveform
- A.4.3 Impulse generators with a defined current waveform
- Table A.1 – Voltage impulse generators [Go to Page]
- A.4.4 Generators with defined voltage and current waveforms
- Table A.2 – Current impulse generators
- Table A.3 – Voltage and current impulse generators
- Table A.4 – Other voltage and current impulse generators
- Annex B (informative) Glossary of IEC 60747-6 [10] thyristor terms [Go to Page]
- B.1 General
- B.2 Thyristor types
- B.3 Basic terms defining the static voltage-current characteristics of triode thyristors
- B.4 Basic terms defining the static voltage-current characteristics of diode thyristors
- B.5 Particulars of the static voltage-current characteristics of triode and diode thyristors
- Figure B.1 – Particulars of the static characteristic of unidirectional thyristors
- Figure B.2 – Particulars of the static characteristic of bidirectional thyristors
- B.6 Terms related to ratings and characteristics; principal voltages
- B.7 Terms related to ratings and characteristics; principal currents
- B.8 Terms related to ratings and characteristics; gate voltages and currents
- B.9 Terms related to ratings and characteristics; powers, energies and losses
- Figure B.3 – a) Approximation of the on-state VT-IT characteristicb) Approximation of the reverse VR-IR characteristic
- B.10 Letter symbols [Go to Page]
- B.10.1 General
- Table B.1 – Additional general subscripts [Go to Page]
- B.10.2 List of letter symbols
- Table B.2 – Principal voltages, anode-cathode voltages
- Table B.3 – Principal currents, anode currents, cathode currents
- Table B.4 – Gate voltages
- Table B.5 – Gate currents
- Table B.6 – Sundry quantities
- Table B.7 – Power loss
- Annex C (informative) Additional parametric tests [Go to Page]
- C.1 General
- C.2 Temperature derating
- C.3 Thermal resistance, Rth
- C.4 Transient thermal impedance, Zth(t)
- Figure C.1 – Test circuit for thermal resistance and impedance
- C.5 Gate reverse current, on-state, IGAT, IGKT
- Figure C.2 – Thermal impedance versus time
- C.6 Gate reverse current, forward conducting state, IGAF, IGKF
- Figure C.3 – Test circuit for gate reverse current, on-state, IGAT, IGKT
- C.7 Gate switching charge, QGS
- Figure C.4 – Test circuit for gate reverse current, forward conducting state, IGAF, IGKF
- Figure C.5 – Test circuit for gate switching current, gate switching charge andgate-to-adjacent terminal breakover voltage, IGSM, QGS, VGK(BO), VGA(BO)
- C.8 Peak gate switching current, IGSM
- Figure C.6 – Test circuit of an integrated gate diode TSS for gate switching current,gate switching charge and gate-to-adjacent terminal breakovervoltage IGSM, QGS, VGK(BO), VGA(BO)
- C.9 Gate-to-adjacent terminal breakover voltage, VGK(BO), VGA(BO)
- Figure C.7 – Overall and expanded clamping waveforms for a P-type gate TSS showing VGK(BO) and QGS measurement (diK/dt = 10 A/µs, VGG = –72 V)
- Annex D (normative) Preferred values [Go to Page]
- D.1 General
- D.2 V(BO) and VDRM
- Figure D.1 – V(BO)/VDRM ratio against VDRM
- D.3 CO, VDRM and IPP
- Figure D.2 – V(BO) vs VDRM
- Figure D.3 – Capacitance variation with DC bias
- D.4 IH
- D.5 IPP and time to half value (duration)
- Figure D.4 – IPP versus Duration for various 10/1 000 current ratings
- Bibliography [Go to Page]