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BS IEC 61435:2013 Nuclear instrumentation. High-purity germanium crystals for radiationdetectors. Measurement methods of basic characteristics, 2013
- 30289361-VOR.pdf [Go to Page]
- CONTENTS
- FOREWORD
- INTRODUCTION
- 1 Scope and object
- 2 Normative references
- 3 Terms, definitions, symbols and abbreviations [Go to Page]
- 3.1 Terms and definitions
- 3.2 Symbols and abbreviations [Go to Page]
- 3.2.1 Symbols
- 3.2.2 Abbreviations
- 3.3 Quantities and units
- 4 Measurement of net electrically-active impurity concentrations [Go to Page]
- 4.1 Sample preparation for Van der Pauw measurements [Go to Page]
- 4.1.1 General
- 4.1.2 Equipment
- 4.1.3 Dimensions and provisions for contacts
- 4.1.4 Etching
- 4.2 Measurements of (NA – ND) [Go to Page]
- 4.2.1 General
- 4.2.2 Equipment
- 4.2.3 Measurements of resistivity
- 4.2.4 Measurements of Hall coefficient
- 4.2.5 Calculation of (NA – ND) from resistivity
- 4.2.6 Calculation of drift mobility from a Van der Pauw measurement
- 4.2.7 Computation of (NA – ND) from RH
- 4.2.8 Spatial dependence of (NA – ND)
- 4.2.9 Axial variations in (NA – ND)
- 5 Deep level transient spectroscopy for the determination of impurity-centre concentration [Go to Page]
- 5.1 General
- 5.2 Equipment for DLTS method
- 5.3 Sample selection and preparation for DLTS
- 5.4 Measurements for the determination of impurity-centre concentration [Go to Page]
- 5.4.1 General
- 5.4.2 DLTS signal as a function of temperature
- 5.4.3 Calculation of (NA – ND)
- 5.4.4 Corrections for equivalent circuit effects
- 5.4.5 Corrections for high trap concentrations and for voltage pulse height
- 5.4.6 DeltaVc/Vp technique for measuring NT
- 5.5 Majority-carrier deep levels in p-type HPGe
- 5.6 Majority-carrier deep levels in n-type HPGe
- 5.7 Report
- 6 Crystallographic properties [Go to Page]
- 6.1 General
- 6.2 Crystallographic orientation
- 6.3 Sample preparation [Go to Page]
- 6.3.1 General
- 6.3.2 Preferential etching
- 6.3.3 Etching methods
- 6.3.4 Etch-pit density
- 6.3.5 Lineage
- 6.3.6 Mosaic
- 6.4 Report
- Annex A (informative)The Hall factor for n-type and p-type HPGe
- Annex B (informative)Function f(RAB,CD/RBC,DA) versus RAB,CD/RBC,DA
- Bibliography
- Figures [Go to Page]
- Figure 1 – Samples
- Figure 2 – Examples of sample shapes
- Figure 3 – DLTS waveforms and gate timing
- Figure 4 – DeltaVC/VP waveforms
- Figure A.1 – Hall factor for n-type HPGe
- Figure A.2 – Hall factor for p-type HPGe
- Figure B.1 – Function f(RAB,CD/RBC,DA) versus RAB,CD/RBC,DA [21]
- Table 1 – Majority-carrier deep levels in p-type HPGe [Go to Page]