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eLibrary > 23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods >

23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods, 2023

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23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods, 2023

30468947-NC.pdf
49_1406e_CD.pdf [Go to Page]
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions [Go to Page]
3.1 Single crystals for SAW wafer
3.2 Terms and definitions related to LN and LT crystals
3.3 Terms and definitions related to all crystals
3.4 Flatness
3.5 Definitions of appearance defects
3.6 Other terms and definitions
4 Requirements [Go to Page]
4.1 Material specification [Go to Page]
4.1.1 Synthetic quartz crystal
4.1.2 LN
4.1.3 LT
4.1.4 LBO, LGS
4.2 Wafer specifications [Go to Page]
4.2.1 General
4.2.2 Diameters and tolerances
4.2.3 Thickness and tolerance
4.2.4 Orientation flat
4.2.5 Secondary flat
4.2.6 Back surface roughness
4.2.7 Warp
4.2.8 TV5, TTV
4.2.9 LTV, PLTV
4.2.10 Front (propagation) surface finish
4.2.11 Front surface defects
4.2.12 Surface orientation tolerance
4.2.13 Inclusions
4.2.14 Etch channel number and position of seed for quartz wafer
4.2.15 Bevel
4.2.16 Curie temperature and tolerance
4.2.17 Lattice constant
4.2.18 Bulk resistivity (conductivity) for reduced LN and LT
4.2.19 Transmittance
4.2.20 Lightness
4.2.21 Colour difference
5 Sampling plan [Go to Page]
5.1 General
5.2 Sampling
5.3 Sampling frequency
5.4 Inspection of whole population
6 Test methods [Go to Page]
6.1 Diameter
6.2 Thickness
6.3 Dimension of OF
6.4 Orientation of OF
6.5 TV5
6.6 Warp
6.7 TTV, LTV and PLTV
6.8 Front surface defects
6.9 Inclusions
6.10 Back surface roughness
6.11 Orientation
6.12 Curie temperature
6.13 Lattice constant
6.14 Bulk resistivity
6.15 Transmittance
6.16 Lightness
6.17 Colour difference
7 Identification, labelling, packaging, delivery condition [Go to Page]
7.1 Packaging
7.2 Labelling and identification
7.3 Delivery condition
8 Measurement of Curie temperature [Go to Page]
8.1 General
8.2 DTA method
8.3 Dielectric constant method
9 Measurement of lattice constant (Bond method)
10 Measurement of face angle by X-ray [Go to Page]
10.1 Measurement principle
10.2 Measurement method
10.3 Measuring surface orientation of wafer
10.4 Measuring OF flat orientation
10.5 Typical wafer orientations and reference planes
11 Measurement of bulk resistivity [Go to Page]
11.1 Resistance measurement of a wafer
11.2 Electrode
11.3 Bulk resistivity
12 Visual inspections – Front surface inspection method
13 Measurement of thickness and thickness variation [Go to Page]
13.1 Measurement principle [Go to Page]
13.1.1 Contact measurement
13.1.2 Contactless measurement
13.2 Sample
13.3 Measurement method [Go to Page]
13.3.1 Contact measurement
13.3.2 Contactless measurement [Go to Page]
13.3.2.1 Contactless point measurement
13.3.2.2 Contactless area scanning measurement
14 Measurement of transmittance [Go to Page]
14.1 Measurement principle
14.2 Sample
14.3 Measurement method
15 Measurement of lightness and colour difference [Go to Page]
15.1 Measurement principle
15.2 Sample
15.3 Measurement method
Annex A (normative) Expression using Euler angle description for piezoelectric single crystals
Annex B (informative) Manufacturing process for SAW wafers [Go to Page]
B.1 Crystal growth methods [Go to Page]
B.1.1 Czochralski growth method
B.1.2 Vertical Bridgman method
B.2 Standard mechanical wafer manufacturing [Go to Page]
B.2.1 Process flow-chart
B.2.2 Cutting both ends and cylindrical grinding
B.2.3 Marking orientation
B.2.4 Slicing
B.2.5 Double-sided lapping
B.2.6 Bevelling (edge rounding)
B.2.7 Mirror polishing
Annex C (informative) Measurement principle of lightness and colour difference
Bibliography [Go to Page]

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23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods, 2023

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