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25/30509887 DC Draft BS EN 63492-1 Semiconductor devices - Isolation for semiconductor devices - Part 1: Failure mechanisms and measurement methods to evaluate solid insulation for semiconductor devices, 2025
- 47_2906e_CD.pdf [Go to Page]
- FOREWORD
- INTRODUCTION
- 1 Scope
- 2 Normative references
- 3 Terms and definitions [Go to Page]
- 3.1 General Terms
- 3.2 Terms related to stresses and ageing
- 3.3 Terms related to testing
- 3.4 Terms related to field application stress
- 4 Insulation Materials [Go to Page]
- 4.1 Solid Insulation
- 4.2 Multilayer Insulation
- 4.3 Material Interfaces
- 4.4 Material properties and relation to insulation
- 5 The different test methodologies: Routine, Type and Sample Test [Go to Page]
- 5.1 Routine Test
- 5.2 Type Test
- 5.3 Sample test
- 6 Basic evaluation considerations for the type test [Go to Page]
- 6.1 Safety limits
- 6.2 Mission profile conditions
- 6.3 Functional, Basic, Supplementary, Double and Reinforced Insulation
- 6.4 Lifetime values [Go to Page]
- 6.4.1 Experimental test procedures
- 6.5 Number of samples per stress condition point
- 6.6 Quality assurance tests
- 6.7 Preconditioning sub cycle
- 6.8 Reference EiSiP
- 6.9 Test conditions [Go to Page]
- 6.9.1 Continuous and cyclic testing
- 6.9.2 Levels of test stresses, ageing factors and diagnostic factors
- 6.10 Determination of EiSiP life [Go to Page]
- 6.10.1 Extrapolation of life test results
- 6.10.2 Safety Factors
- 6.11 Diagnostics [Go to Page]
- 6.11.1 Diagnostic tests - End point criteria
- 6.12 Marking on EiSiP
- 6.13 Data Sheet
- 6.14 Test report
- 7 Ageing [Go to Page]
- 7.1 Ageing mechanism
- 7.2 Assessment of ageing mechanisms
- 7.3 Electrical ageing [Go to Page]
- 7.3.1 High-Voltage-High-Frequency electrical ageing [Go to Page]
- 7.3.1.1 Creepage and Clearance at high frequencies
- 7.3.1.2 Guidance/ requirements on how to conduct HF-HV lifetime determination
- 7.3.2 dV/dt of isolation voltage or rectangular versus sinusoidal voltage over time
- 7.3.3 Life-time extrapolation models
- 7.3.4 Statistical evaluation methods
- 7.4 Thermal ageing [Go to Page]
- 7.4.1 External thermal ageing [Go to Page]
- 7.4.1.1 Thermal ageing influencing mechanical and electrical parameters
- 7.4.1.2 Temperature index versus thermal activation energy
- 7.4.2 Internal thermal ageing [Go to Page]
- 7.4.2.1 Thermal losses of semiconductors or internal connections
- 7.4.2.2 Thermal ageing under HV-HF stress
- 7.5 Mechanical ageing
- 7.6 Environmental ageing
- 7.7 Accelerated ageing
- 7.8 Multifactor ageing
- Annex A (informative) Glossary: General remark [Go to Page]
- A.1 Absorption (dielectric)
- A.2 Ageing
- A.3 Ageing (mechanical, thermal, electrical, environmental)
- A.4 Cavity
- A.5 Charge injection and space charges
- A.6 Corona
- A.7 Defect
- A.8 Delamination
- A.9 Depolymerization
- A.10 Dielectric loss
- A.11 Discharge
- A.12 Discontinuity
- A.13 Electric breakdown (including electrical strength)
- A.14 Electrical insulating material (EIM)
- A.15 Electrical insulation system
- A.16 Electrical losses
- A.17 Electrical stress (a.c., d.c., f, transients)
- A.18 Electrical treeing
- A.19 Erosion
- A.20 External and Internal Insulation
- A.21 Extrinsic electrical ageing
- A.22 Failure
- A.23 Fatigue
- A.24 Flashover
- A.25 Insulation, extruded
- A.26 Insulation, laminated
- A.27 Insulation
- A.28 Interface
- A.29 Intrinsic breakdown
- A.30 Intrinsic electrical ageing
- A.31 Loss
- A.32 Melting
- A.33 Moisture and water treeing
- A.34 Partial discharge (including partial discharge pulse and surface discharge)
- Bibliography [Go to Page]
