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  • BSI
    BS EN 62047-16:2015 Semiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
    Edition: 2015
    $313.97
    / user per year

Description of BS EN 62047-16:2015 2015

This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.



Standard NumberBS EN 62047-16:2015
TitleSemiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
StatusDefinitive
Publication Date2015-07-31
Identical National Standard OfEN 62047-16:2015, IEC 62047-16:2015
DescriptorsIntegrated circuits, Electronic equipment and components, Vocabulary, Terminology, Semiconductor technology, Semiconductor devices, Electromechanical devices
ICS31.080.99 Other semiconductor devices
CommitteeEPL/47
ISBN978 0 580 78080 6
PublisherBSI
Pages18

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
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