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  • BSI
    BS EN 62979:2017 Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
    Edition: 2017
    $313.97
    / user per year

Description of BS EN 62979:2017 2017

This document provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.

This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high.



Standard NumberBS EN 62979:2017
TitlePhotovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
StatusDefinitive
Publication Date2017-12-14
Identical National Standard OfIEC 62979:2017, EN 62979:2017, EN 61000-4-14:1999/A2:2009
DescriptorsModules, Photovoltaic cells, Loading, Cyclic loading, Periodicity, Solar cells, Variable, Photoelectric cells, Cyclic
ICS27.160 Solar energy engineering
CommitteeGEL/82
ISBN978 0 580 91892 6
PublisherBSI
Pages20

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
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