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eLibrary > PD IEC TS 62607-5-3:2020 Nanomanufacturing. Key control characteristics - Thin-film organic/nano electronic devices. Measurements of charge carrier concentration >

PD IEC TS 62607-5-3:2020 Nanomanufacturing. Key control characteristics - Thin-film organic/nano electronic devices. Measurements of charge carrier concentration, 2020

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PD IEC TS 62607-5-3:2020 Nanomanufacturing. Key control characteristics - Thin-film organic/nano electronic devices. Measurements of charge carrier concentration, 2020

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CONTENTS
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Sample structures [Go to Page]
4.1 Metal/insulator/semiconductor (MIS) structure
4.2 Thin-film specimens with the van der Pauw configuration
Figures [Go to Page]
Figure 1 – Typical metal/insulator/semiconductor (MIS) structures
Figure 2 – An organic MIS structure favourable for capacitance-voltage measurements
5 Criteria for choosing a method for measuring carrier concentration in organic semiconductor layers
6 Appropriate data formats [Go to Page]
Figure 3 – Sample structures for Hall-effect measurementwith the van der Pauw configuration
Table 1 – Possible data format to be given together withcarrier concentrations obtained with capacitance-voltage measurements
Table 2 – Possible data format to be given together withcarrier concentrations obtained with the Hall-effect measurements
Annex A (informative)Case study of carrier concentration measurements of organic materials [Go to Page]
A.1 Procedure of capacitance-voltage (C-V) measurement
Figure A.1 – Equivalent circuit model for capacitance-voltagemeasurement with MIS structure
A.2 Capacitance-voltage measurement for unoptimized pentacene MIS structures
Figure A.2 – Typical capacitance-voltage curves observedfor MIS structures with organic semiconductor films
Figure A.3 – Capacitance-voltage curves obtainedfor the MIS structure with 70-nm-thick-pentacene film
A.3 Influences of semiconductor layer thickness and electrode contact conditions on C-V measurements
A.4 Capacitance-voltage measurement for a pentacene MIS structure with an ultrathin insulator
Figure A.5 – Capacitance-voltage curves obtained for a pentaceneMIS structure with an ultrathin SAM-modified AlOx insulator
A.5 Procedure of Hall-effect measurement
A.6 Hall-effect measurement for organic semiconductor single-crystalline layers
Figure A.6 – Hall-effect measurement results for rubrenesingle-crystalline layer doped with ferric chloride
Bibliography [Go to Page]

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PD IEC TS 62607-5-3:2020 Nanomanufacturing. Key control characteristics - Thin-film organic/nano electronic devices. Measurements of charge carrier concentration, 2020

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