ASTM F1190-99
Historical Standard: ASTM F1190-99 Standard Guide for Neutron Irradiation of Unbiased Electronic Components
SUPERSEDED (see Active link, below)
ASTM F1190
1. Scope
1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.2 System and subsystem exposures and test methods are not included in this practice.
1.3 This practice is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The practical limits for neutron fluence ([phi]eq,1MeV,Si or [phi]eq,1MeV,GaAs) in semiconductor testing range from approximately 10 to 10 16 n/cm .
1.4 This practice addresses those issues and concerns pertaining to irradiations with neutrons of energies greater than 10 keV.
1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
ASTM Standards
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
E1249 Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
E1250 Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E1855 Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
E2450 Practice for Application of CaF2(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
F980 Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
F1892 Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
Other Documents
DASIAC SR-94-009, Ap Guide to Nuclear Weapons Effects Simulation Facilities and Techniques Available from Defense Special Weapons Agency, Washington, DC 20305-1000.Keywords
dosimetry; electronic component; equivalent monoenergetic neutron fluence; fast burst reactor (FBR); gallium arsenide; gamma dose; gamma effects; irradiation; neutron fluence; neutron flux; nickel; 1 MeV equivalent fluence; radiation; reactor; semiconductor; silicon; sulfur; thermoluminescent dosimeter (TLD); TRIGA-type reactor: Destructive testing--semiconductors; Dosimetry; Electrical conductors (semiconductors); Electronic devices/instruments/equipment; Equivalent monoenergetic neutron fluence; Exposure tests--electronic components/devices; Fast burst reactors (FBR); Gallium arsenide; Gamma radiation; Germanium--semiconductor applications; Irradiance/irradiation--semiconductors; 1MeV equivalent fluence; Neutron radiation; Nickel electrical/electronic applications; Radiation exposure--electronic components/devices; Reactors; Semiconductor technology; Silicon semiconductors; Sulfur; Thermal neutron radiation; Thermoluminescent dosimeter (TLD); TRIGA-type reactors;
ICS Code
ICS Number Code 31.020 (Electronic components in general); 31.080.01 (Semi-conductor devices in general)
DOI: 10.1520/F1190-99
ASTM International is a member of CrossRef.
