FORMAT
BOOKS
PACKAGES
EDITION
PUBLISHER
CONTENT TYPE
Act
Admin Code
Announcements
Bill
Book
CADD File
CAN
CEU
Charter
Checklist
City Code
Code
Commentary
Comprehensive Plan
Conference Paper
County Code
Course
DHS Documents
Document
Errata
Executive Regulation
Federal Guideline
Firm Content
Guideline
Handbook
Interpretation
Journal
Land Use and Development
Law
Legislative Rule
Local Amendment
Local Code
Local Document
Local Regulation
Local Standards
Manual
Model Code
Model Standard
Notice
Ordinance
Other
Paperback
PASS
Periodicals
PIN
Plan
Policy
Product
Product - Data Sheet
Program
Provisions
Requirements
Revisions
Rules & Regulations
Standards
State Amendment
State Code
State Manual
State Plan
State Standards
Statute
Study Guide
Supplement
Sustainability
Technical Bulletin
All
|
Description of ASTM-F1726 2002ASTM F1726-02Withdrawn Standard: Standard Guide for Analyis of Crystallographic Perfection of Silicon Wafers (Withdrawn 2003)ASTM F1726Scope This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This guide covers the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage. Use of this practice is based upon the application of several referenced standards in a prescribed sequence to reveal and count microscopic defects or structures. 1.2 Materials for which this practice is applicable may be defined by the limitations of the referenced documents. 1.2.1 This practice is suitable for use with epitaxial or polished wafers grown in either (111) or (100) direction and doped either p or n-type with resistivity greater than 0.0005 Ω-cm. 1.2.2 This practice is suitable for use with epitaxial wafers with layer thickness greater than 0.5 µm. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Keywords dislocation; epitaxy; grain boundaries; hillock; polycrystalline imperfections; preferential etch; shallow pit; silicon; slip; stacking fault ICS Code ICS Number Code 29.045 (Semiconducting materials) DOI: 10.1520/F1726-02 The following editions for this book are also available...
This book also exists in the following packages...Subscription InformationMADCAD.com ASTM Standards subscriptions are annual and access is unlimited concurrency based (number of people that can access the subscription at any given time) from single office location. For pricing on multiple office location ASTM Standards Subscriptions, please contact us at info@madcad.com or +1 800.798.9296.
Some features of MADCAD.com ASTM Standards Subscriptions are: - Immediate Access: As soon as the transaction is completed, your ASTM Standards Subscription will be ready for access.
For any further information on MADCAD.com ASTM Standards Subscriptions, please contact us at info@madcad.com or +1 800.798.9296.
About ASTMASTM International, formerly known as the American Society for Testing and Materials (ASTM), is a globally recognized leader in the development and delivery of international voluntary consensus standards. Today, some 12,000 ASTM standards are used around the world to improve product quality, enhance safety, facilitate market access and trade, and build consumer confidence. ASTM’s leadership in international standards development is driven by the contributions of its members: more than 30,000 of the world’s top technical experts and business professionals representing 150 countries. Working in an open and transparent process and using ASTM’s advanced electronic infrastructure, ASTM members deliver the test methods, specifications, guides, and practices that support industries and governments worldwide. |
GROUPS
|