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Description of ASTM-F996 2010ASTM F996-10Historical Standard: Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage CharacteristicsASTM F996Scope 1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. , , The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔVit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region. 1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results. 1.3 The application of this test method requires the MOSFET to have a substrate (body) contact. 1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish
appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Keywords c/v characteristics; current–voltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes; Current measurement--semiconductors; Electrical conductors (semiconductors); Gate and field oxides; Ionizing radiation; MOSFETs; Radiation exposure--electronic components/devices; Silicon semiconductors; Threshold voltage ICS Code ICS Number Code 31.080.30 (Transistors) DOI: 10.1520/F0996-10 The following editions for this book are also available...This book also exists in the following packages...Subscription InformationMADCAD.com ASTM Standards subscriptions are annual and access is unlimited concurrency based (number of people that can access the subscription at any given time) from single office location. For pricing on multiple office location ASTM Standards Subscriptions, please contact us at info@madcad.com or +1 800.798.9296.
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About ASTMASTM International, formerly known as the American Society for Testing and Materials (ASTM), is a globally recognized leader in the development and delivery of international voluntary consensus standards. Today, some 12,000 ASTM standards are used around the world to improve product quality, enhance safety, facilitate market access and trade, and build consumer confidence. ASTM’s leadership in international standards development is driven by the contributions of its members: more than 30,000 of the world’s top technical experts and business professionals representing 150 countries. Working in an open and transparent process and using ASTM’s advanced electronic infrastructure, ASTM members deliver the test methods, specifications, guides, and practices that support industries and governments worldwide. |
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